Trans MOSFET N-CH 30V 0.59A 3-Pin DFN T/R
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Trench MOSFET technology
- Low threshold voltage
- Very fast switching
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- Ultra thin package profile of 0.37 mm height
Характеристики
| Бренд | Nexperia |
|---|---|
| Описание продукта | 1.02(Max) x 0.62(Max) x 0.5(Max) |
| Рабочая температура | -55 to 150 °C |
| Max Proce | 260 |
| Msl Level | MSL 1 - Unlimited |
| Schedule B | 8541210080 |
| HTSN | 8541210075 |
| Страна происхождения | Китай |
| Channel Type | N |
| Supplier | DFN |
| Channel Mode | Enhancement |
| Maximum C | 0.59 A |
| Maximum D | 30 V |
| Maximum G | 8 V |
| Typical T | 4 ns |
| Typical T | 12 ns |
| Rds On | 670@4.5V mOhm |
| Typical F | 3 ns |
| Typical R | 7 ns |
SKU: PMZB550UNEYL