Trans MOSFET N-CH 100V 9.7A 3-Pin(2+Tab) D2PAK T/R
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for , provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRF520NL) is available for low-profile applications.
- Advanced Process Technology
- Surface Mount (IRF52ONS)
- Low-profile through-hole (I R F520N L)
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Характеристики
| Бренд | Infineon |
|---|---|
| Описание продукта | 10.67 x 9.65 x 4.83 mm |
| Рабочая температура | -55 to 175 °C |
| Max Proce | 260 |
| Msl Level | MSL 1 - Unlimited |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | United States |
| Channel Type | N |
| Supplier | D2PAK |
| Channel Mode | Enhancement |
| Maximum C | 9.7 A |
| Maximum D | 100 V |
| Maximum G | ±20 V |
| Typical T | 4.5 ns |
| Typical T | 32 ns |
| Rds On | 200@10V mOhm |
| Typical F | 23 ns |
| Typical R | 23 ns |
SKU: IRF520NSTRLPBF