Trans MOSFET Array Dual N-CH 8-Pin WLCSP T/R
This N-Channel Power MOSFET is produced using trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications of DRONE or NOTEBOOK PC.
- Ultra Low On-Resistance
- Improves efficiency by reducing conduction losses
- Low Gate Charge
- Ease of drive, faster turn-on
- Pb-Free, Halogen Free and RoHS compliance
- Environment friendliness
- High Speed Switching
- Reduces dynamic power losses
- Common-Drain type
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Описание продукта | 6.05 x 2.55 x 0.23 mm |
| Maximum G | ±20 V |
| Max Proce | 260 °C |
| Channel Type | Dual N |
| Schedule B | 8541210080 |
| HTSN | 8541210095 |
| Страна происхождения | United States |
| Typical T | 280 ns |
| Typical T | 40 ns |
SKU: EFC4C002NLTDG