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Thyristor TSPD 66V 4.3A 8-Pin SOIC T/R

These low-voltage dual bidirectional thyristor protectors are designed to protect ISDN applications against transients caused by lightning strikes and a.c. power lines. Offered in two voltage variants to meet battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current helps prevent d.c. latchup as the current subsidesThese monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.
  • Ion-Implanted Breakdown Region
  • Precise and Stable Voltage
  • Low Voltage Overshoot under Surge
  • Planar Passivated Junctions
  • Low Off-State Current <10 uA
  • Rated for International Surge Wave Shapes
  • UL Recognized Component

Характеристики

Бренд Bourns
Описание продукта 5 x 4 x 1.55 mm
Рабочая температура -65 to 150 °C
Lead Finish Matte Tin
Maximum H 150 mA
Msl Level 1
Supplier SOIC
Max Proce 260
Repetitiv 0.01 mA
Peak Repe 66 V
Repetitiv 66 V
Surge Cur 4.3 A
Peak On S 3 V
Schedule B 8533400080
HTSN 8533408050
Страна происхождения Costa Rica
Type Prod TSPD
SKU: TISP3082F3DR-S Поставщик: по запросу