STMSTGP20M65DF2

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. The positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation

• High short-circuit withstand time
• VCE(sat): 1.55 V (typ.) @ IC: 20 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and very fast recovery antiparallel diode