SRAMs (asynchronous)

The ISSI IS62WV10248DBLL ishigh-speed, 8M bit static RAMs organized as 1M wordsby 8 bits. It is fabricated using ISSI"s high-performanceCMOS technology. This highly reliable process coupledwith innovative circuit design techniques, yields highperformanceand low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is low(deselected), the device assumes a standby mode atwhich the power dissipation can be reduced down withCMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs. The active LOW Write Enable(WE) controls both writing and reading of the memory.The IS62WV10248DBLL is packaged in the JEDEC standard 48-pin mini BGA (9mmx 11mm) and 44-Pin TSOP (TYPE II).

• High-speed access time: 45ns, 55ns
• CMOS low power operation
  • 30 mW (typical) operating
  • 12 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
  • 1.65V--2.2V Vdd (62/65WV10248DALL)
  • 2.4V--3.6V Vdd (62/65WV10248DBLL)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Automotive temperature (-40°C to +125°C)
• Lead-free available