SRAM Nonvolatile Controller Unit 8-Pin SOIC
The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory. A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM. During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists. The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.
Power monitoring and switching for 3-volt battery-backup applications Write-protect control 3-volt primary cell inputs Less than 10ns chip-enable propagation delay 5% or 10% supply operation
Характеристики
| Бренд | Texas Instruments |
|---|---|
| Max Proce | 260 |
| Описание продукта | 5 x 4 x 1.5 mm |
| Lead Finish | Gold |
| Msl Level | 1 |
| Supplier | SOIC |
| Рабочая температура | -40 to 85 °C |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Screening Level | Industrial |
| Category | SRAM Nonvolatile Controller Unit |
| Страна происхождения | Malaysia |
SKU: BQ2201SN-N