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SRAM Nonvolatile Controller Unit 8-Pin SOIC

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory. A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM. During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists. The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.
  • Power monitoring and switching for 3-volt battery-backup applications
  • Write-protect control
  • 3-volt primary cell inputs
  • Less than 10ns chip-enable propagation delay
  • 5% or 10% supply operation
  • Характеристики

    Бренд Texas Instruments
    Max Proce 260
    Описание продукта 5 x 4 x 1.5 mm
    Lead Finish Gold
    Msl Level 1
    Supplier SOIC
    Рабочая температура -40 to 85 °C
    Schedule B 8542390000
    HTSN 8542390001
    Screening Level Industrial
    Category SRAM Nonvolatile Controller Unit
    Страна происхождения Malaysia
    SKU: BQ2201SN-N