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SRAM Chip Async Single 3V 1M-Bit 128K x 8 55ns

The AS6C1008 is a 1,048,57 6-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMO S technology. Its standby current is stable within the range of operating temperature. The AS6C1008 is well designed for very low power system applications, and particularly well suited for battery back-up non-volatile memory application. The AS6C1008 operates from a single power supply of 2.7V ~ 5.5V.
  • Access time :55ns
  • Low power consumption:
  • Operating current:10 mA (TYP.)
  • Standby current: 1 µA (TYP.)
  • Fully Compatible with all Competitors 3.3V product
  • Fully static operation
  • Tri-state output
  • Data retention voltage : 1.5V (MIN.)
  • All products are ROHS Compliant
  • Package : 32-pin 450 mil SOP
  • 32-pin 600 mil P-DIP
  • 32-pin 8mm x 20mm TSOP-I
  • 32-pin 8mm x 13.4mm sTSOP
  • 36-ball 6mm x 8mm TFBGA

Характеристики

Бренд Alliance Memory
Timing Type Asynchronous
Number Of Words 128 kWords
Density 1 Mbit
Рабочая температура -40 to 85 °C
Number Of Ports 1
Address B 17 Bit
Number Of 8 Bit
Number Of 8 Bit
Maximum O 60 mA
Описание продукта mm
Maximum R 55 ns
Typical O 3.0000 V
Schedule B 8542320040
HTSN 8542320041
Страна происхождения Taiwan
Screening Level Industrial
Minimum O 2.7 V
Maximum O 5.5 V
SKU: AS6C1008-55BIN Поставщик: по запросу