Small-Signal Transistors
Small-Signal Transistors
- TrenchFET® power MOSFET
- Small 0.8 mm x 0.8 mm outline area
- Low 0.4 mm max. profile
- Typical ESD protection 1700 V HBM
Характеристики
| Бренд | Vishay |
|---|---|
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8541290080 |
| HTSN | 8541210095 |
| Страна происхождения | United States |
| Channel Type | P |
| Channel Mode | Enhancement |
| Maximum C | 2.9 A |
| Maximum D | 12 V |
| Maximum G | ±8 V |
| Typical T | 7 ns |
| Typical T | 58 ns |
| Rds On | 0.08@3.7V Ohm |
| Typical F | 31|30 ns |
| Typical R | 16|23 ns |
| Family | SI8819EDB |
SKU: SI8819EDB-T2-E1