RF Components

250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.

• Excellent ruggedness
• High efficiency
• Low Rth providing excellent thermal stability
• Designed for low memory effects providing excellent pre-distortability
• Internally matched for ease of use
• Integrated ESD protection
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)