REN2SJ542-E
REN2SJ542-E
- Low on-resistance
- RDS(on): 0.050 O typ
- Low drive current
- 4 V gate drive devices
- High speed switching
Характеристики
| Бренд | Renesas Electronics |
|---|---|
| Рабочая температура | -55 to 150 °C |
| Msl Level | 1 |
| Schedule B | 8542320040 |
| HTSN | 8542320041 |
| Страна происхождения | United States |
| Channel Type | P |
| Channel Mode | Enhancement |
| Maximum C | 18 A |
| Maximum D | 60 V |
| Maximum G | ±20 V |
| Typical T | 14 ns |
| Typical T | 190 ns |
| Rds On | 0.065@10V Ohm |
| Typical F | 135 ns |
| Typical R | 95 ns |
| Family | 2SJ542 |
| Упаковка | Box |
SKU: 2SJ542-E