Programmable Gamma Voltage Generator 20-Pin VQFN EP T/R

The BUF08630 offers eight programmable gamma channels and one programmable VCOM channel. The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08630 supports up to 16 write operations to the on-chip memory. The BUF08630 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves. All gamma and VCOM channels offer a rail-to-rail output that typically swings to within 150 mV of either supply rail with a 10-mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400 kHz, and high-speed data transfers up to 3.4 MHz. The BUF08630 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF08630 is available in a 20-pin QFN package, and is specified from –40°C to +95°C. 

10-Bit Resolution

8-Channel P-Gamma

1-Channel P-V_COM

High Slew Rate V_COM: 45 V/µs

16x Rewritable Nonvolatile Memory

Two Independent Pin-Selectable Memory Banks

Rail-to-Rail Output:

• 300 mV Min Swing-to-Rail (10 mA)
• > 300 mA Max I_OUT

Low Supply Current

Supply Voltage: 9 V to 20 V

Digital Supply: 2 V to 5.5 V

Two-Wire Interface:

• Supports 400 kHz and 3.4 MHz

1/2 AVDD Capability

APPLICATIONS

• TFT-LCD Reference Drivers