Processor Supervisor 3V/5V 16-Pin SOIC T/R
The M40SZ100W NVRAM controller is a self-contained device which converts a standard low-power SRAM into a non-volatile memory. A precision voltage reference and comparator monitors the VCCinput for an out-of-tolerance condition.When an invalid VCCcondition occurs, the conditioned chip enable output (ECON)is forced inactive to write protect the stored data in the SRAM. During a power failure, the SRAM is switched from the VCCpin to the external battery to provide the energy required for data retention. On a subsequent power-up, the SRAM remains write-protected until a valid power condition returns.
Convert low power SRAMs into NVRAMs 3 V operating voltage Precision power monitoring and power switching circuitry Automatic write-protection when VCCis out-of-tolerance Choice of supply voltage and power-fail deselect voltage: VCC= 2.7 to 3.6 V; 2.55 V = VPFD= 2.70 V Reset output (RST ) for power on reset 1.25 V reference (for PFI/PFO) Less than 15 ns chip enable access propagation delay Battery low pin (BL ) RoHS compliant Lead-free second level interconnect
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Number Of | 1 |
| Chip Enab | Да |
| Screening Level | Industrial |
| Output Driver | Active Low/Open Drain |
| Lead Finish | Matte Tin |
| Manual Reset | Нет |
| Msl Level | 3 |
| Описание продукта | 10 x 4 x 1.6 mm |
| Watchdog Timer | Нет |
| Рабочая температура | -40 to 85 °C |
| Monitored | 3, 5 V |
| Power Fai | Да |
| Battery B | Да |
| Operating | 500 uA |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Minimum O | 2.7 V |
| Supplier | SOIC |
| Maximum P | 1000 mW |
| Maximum O | 3.6 V |
| Max Proce | 260 |
SKU: M40SZ100WMQ6F