Power Switch Lo Side 3.5A 8-Pin SO N T/R
The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics VIPower M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications.Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.Fault feedback can be detected by monitoring voltage at the input pin
ECOPACK® : lead free and RoHS compliant Automotive Grade: compliance with AEC guidelines Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power MOSFET (analog driving) Compatible with standard Power MOSFET
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Страна происхождения | Китай |
| Supplier | SO N |
| Описание продукта | 5 x 4 x 1.65 mm |
| Minimum O | 3.5 A |
| Switch On | 0.12 Ohm |
| Lead Finish | Gold |
| Max Proce | 240 |
| Msl Level | 3 |
| Type Prod | Low Side |
| Number Of | 2 |
| Supply Current | 0.1 mA |
SKU: VNS3NV04DPTR-E