Power Switch Lo Side 1.7A 8-Pin SO N T/R

The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.Fault feedback can be detected by monitoring the voltage at the input pin.

Linear current limitation

Thermal shutdown

Short circuit protection

Integrated clamp

Low current drawn from input pin

Diagnostic feedback through input pin

ESD protection

Direct access to the gate of the power mosfet (analog driving)

Compatible with standard power mosfet

In compliance with the 2002/95/EC european directive