Power Switch Lo Side 0.53A 8-Pin SOIC T/R
The IPS042G is a fully protected dual low side SMART POWER MOSFET that features over-current, over-temperature, ESD protection and drain to source active clamp. This device combines a HEXFET POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 2A. This device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
- Over temperature shutdown
- Over current shutdown
- Active clamp
- Low current & logic level input
- E.S.D protection
Характеристики
| Бренд | Infineon |
|---|---|
| Schedule B | 8542310000 |
| HTSN | 8542310001 |
| Maximum P | 1000 mW |
| Supplier | SOIC |
| Описание продукта | 5 x 4 x 1.5 mm |
| Рабочая температура | -40 to 150 °C |
| Minimum O | 0.53 A |
| Input Voltage | -0.3 to 7 V |
| Switch On | 0.37 Ohm |
| Lead Finish | Tin/Lead |
| Max Proce | 240|300 |
| Msl Level | 1 |
| Type Prod | Low Side |
| Number Of | 2 |
| Supply Current | 10 mA |
SKU: IPS042GTR