POWER MOSFET
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- VDS: 60 V
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Рабочая температура | -55 to 175 °C |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 100 A |
| Maximum D | 60 V |
| Maximum G | ±20 V |
| Typical T | 21.6 ns |
| Typical T | 28.6 ns |
| Rds On | 5.6@10V MOhm |
| Typical F | 15 ns |
| Typical R | 55.5 ns |
| Family | STP100N6F7 |
| Упаковка | Tube |
SKU: STP100N6F7