POWER MOSFET
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- Very low turn-off switching losses
- 100% avalanche tested
- Zener-protected
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8542390000 |
| HTSN | 8541290095 |
| Страна происхождения | Korea, South |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 34 A |
| Maximum D | 600 V |
| Maximum G | ±25 V |
| Typical T | 16.5 ns |
| Typical T | 96.5 ns |
| Rds On | 87@10V Ohm |
| Typical F | 8 ns |
| Typical R | 9.5 ns |
| Family | STFW42N60M2-EP |
| Упаковка | Tube |
SKU: STFW42N60M2-EP