POWER MOSFET
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected
- RDS(on) max: 0.33 ?
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8542390000 |
| HTSN | 8541290095 |
| Страна происхождения | Китай |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 12 A |
| Maximum D | 650 V |
| Maximum G | ±25 V |
| Typical T | 11 ns |
| Typical T | 46 ns |
| Rds On | 0.33@10V Ohm |
| Typical F | 12.5 ns |
| Typical R | 7.5 ns |
| Family | STFU18N65M2 |
| Упаковка | Tube |
SKU: STFU18N65M2