POWER MOSFET
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- RDS(on) max: 0.38 ?
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 12 A |
| Maximum D | 650 V |
| Maximum G | ±25 V |
| Typical T | 55.5 ns |
| Typical T | 14 ns |
| Rds On | 0.38@10V Ohm |
| Typical F | 11.4 ns |
| Typical R | 8.5 ns |
| Family | STFU15NM65N |
| Упаковка | Tube |
SKU: STFU15NM65N