POWER MOSFET
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
- RDS max: 0.375 ?
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 14 A |
| Maximum D | 800 V |
| Maximum G | ±30 V |
| Typical T | 19 ns |
| Typical T | 44 ns |
| Rds On | 0.375@10V Ohm |
| Typical F | 10 ns |
| Typical R | 17.6 ns |
| Family | STFU15N80K5 |
| Упаковка | Tube |
SKU: STFU15N80K5