POWER MOSFET
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Рабочая температура | -55 to 175 °C |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | Китай |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 54 A |
| Maximum D | 40 V |
| Maximum G | ±20 V |
| Typical T | 21.2 ns |
| Typical T | 40.4 ns |
| Rds On | 8.2@10V MOhm |
| Typical F | 25.2 ns |
| Typical R | 113 ns |
| Screening Level | Automotive |
| Family | STD64N4F6AG |
| Упаковка | T/R |
SKU: STD64N4F6AG