POWER MOSFET
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
- Designed for automotive applications and AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Рабочая температура | -55 to 175 °C |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Страна происхождения | Китай |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 45 A |
| Maximum D | 100 V |
| Maximum G | ±10 V |
| Typical T | 15 ns |
| Typical T | 24 ns |
| Rds On | 18@10V MOhm |
| Typical F | 8 ns |
| Typical R | 17 ns |
| Screening Level | Automotive |
| Family | STD47N10F7AG |
| Упаковка | T/R |
SKU: STD47N10F7AG