POWER MOSFET
This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Рабочая температура | -55 to 175 °C |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Channel Type | P |
| Channel Mode | Enhancement |
| Maximum C | 40 A |
| Maximum D | 30 V |
| Maximum G | ±20 V |
| Rds On | 0.018@10V Ohm |
| Family | STD40P3LLH6 |
| Упаковка | T/R |
SKU: STD40P3LLH6