POWER MOSFET
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
- Designed for automotive applications and AEC-Q101 qualified
- Fast-recovery body diode
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
- RDS(on) max: 0.084 O
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 35 A |
| Maximum D | 500 V |
| Maximum G | ±25 V |
| Typical T | 20 ns |
| Typical T | 73.5 ns |
| Rds On | 0.084@10V Ohm |
| Typical F | 9.8 ns |
| Typical R | 9.4 ns |
| Screening Level | Automotive |
| Family | STB45N50 |
| Упаковка | T/R |
SKU: STB45N50DM2AG