POWER MOSFET
POWER MOSFET
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8541290080 |
| HTSN | 8541290075 |
| Страна происхождения | Китай |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 28 A |
| Maximum D | 600 V |
| Maximum G | ±25 V |
| Typical T | 21.2 ns |
| Typical T | 68 ns |
| Rds On | 0.11@10V Ohm |
| Typical F | 10.7 ns |
| Typical R | 17 ns |
| Screening Level | Automotive |
| Family | STB37N60 |
| Упаковка | T/R |
SKU: STB37N60DM2AG