NVRAM NVSRAM Parallel 4M-Bit 5V 32-Pin DIP Module

The CMOS bq4015/Y/LY is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. The control circuitry constantly monitors the single supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The bq4015/Y/LY uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM. The bq4015/Y/LY requires no external circuitry and is compatible with the industry-standard 4-Mb SRAM pinout. 

Data Retention for at least 10 Years Without Power

Automatic Write-Protection During Power-up/Power-Down Cycles

Conventional SRAM Operation, Including Unlimited Write Cycles

Internal Isolation of Battery before Power Application

5-V or 3.3-V Operation

Industry Standard 32-Pin DIP Package