NVRAM FRAM Parallel 64K-Bit 5V 28-Pin SOIC

The FM1608B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 38 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make F-RAM superior to other types of nonvolatile memory. In-system operation of the FM1608B is very similar to other RAM devices. Minimum read- and writecycle times are equal. The F-RAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM1608B is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the disadvantages associated with modules and batteries or hybrid memory solutions. These capabilities make the FM1608B ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a through-hole package allows ease of insertion and removal in systems that utilize a DIP socket. Device specifications are guaranteed over the extended temperature range of 0°C to +85°C.

• 64Kbit Ferroelectric Nonvolatile RAM
  • Organized as 8,192 x 8 bits
  • High Endurance 1 Trillion (1012 Read/Writes
  • 38 year Data Retention @ +75 C
  • NoDelay™ Writes
  • Advanced High-Reliability Ferroelectric Process
• Superior to BBSRAM Modules
  • No Battery Concerns
  • Monolithic Reliability
• Superior for Moisture, Shock, and Vibration
  • Resistant to Negative Voltage Undershoots
• SRAM & EEPROM Compatible
  • JEDEC 8Kx8 SRAM & EEPROM pinout
  • 70 ns Access Time
  • 130 ns Cycle Time
  • Low Power Operation
  • 15 mA Active Current
  • 25 A (typ.) Standby Current
• Industry Standard Configuration
  • Extended Temperature 0 °C to +85 °C
  • 28-pin “Green”/RoHS PDIP Package