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NAND Gate 1-Element 2-IN CMOS 5-Pin SSOP

NAND Gate 1-Element 2-IN CMOS 5-Pin SSOP
  • High speed operation : tPd = 3.7 ns (typ.) at Vcc = 5 V, 15 pF
  • Low power dissipation : Icc = 2 µA (max) at Ta = 25°C
  • 5.5V tolerant inputs
  • Balanced propagation delays : tpLH = tpHL
  • Wide operating voltage range : Vcc = 2 to 5.5 V

Характеристики

Бренд Toshiba
Maximum Q 2 uA
Minimum O 2 V
Msl Level 1
Max Proce 260
Maximum O 5.5 V
Maximum P 11.4@3.3V|7.5@5V ns
Описание продукта 2.9 x 1.6 x 1.1
Logic Function NAND
Рабочая температура -40 to 85 °C
Supplier SSOP
Schedule B 8542390000
HTSN 8542390001
Страна происхождения Thailand
Screening Level Industrial
Maximum L 8 mA
Maximum H -8 mA
Number Of 1
Number Of 2
SKU: TC7SH00F,LJ(CT