NAND Flash Memory(SLC Large Capacity)

The TC58NVG3S0F is a single 3.3V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 4096blocks. The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 14.5 Kbytes: 4328 bytes × 64 pages). The TC58NVG3S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

• Organization
  • x8
  • Memory cell array 4328 × 256K × 8
  • Register 4328 × 8
  • Page size 4328 bytes
  • Block size (256K + 14.5K) bytes
• Modes
  • Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
  • Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
• Mode control
  • Serial input/output
  • Command control
• Number of valid blocks
  • Min 4016 blocks
  • Max 4096 blocks
• Power supply
  • VCC = 2.7V to 3.6V
• Access time
  • Cell array to register 30 µs max
  • Serial Read Cycle 25 ns min (CL=100pF)
• Program/Erase time
  • Auto Page Program 300 µs/page typ.
  • Auto Block Erase 3 ms/block typ.
• Operating current
  • Read (25 ns cycle) 30 mA max.
  • Program (avg.) 30 mA max
  • Erase (avg.) 30 mA max
  • Standby 50 µA max
• Package
  • TSOP I 48-P-1220-0.50C (Weight: 0.53 g typ.)
• 4bit ECC for each 512Byte is required.