NAND Flash Memory
NAND Flash Memory
Характеристики
| Бренд | Micron |
|---|---|
| Maximum P | 0.6/Page ms |
| Ecc Support | Да |
| Simultane | Нет |
| Screening Level | Industrial |
| Program Current | 35 mA |
| Boot Block | Нет |
| Block Org | Symmetrical |
| Erase Sus | Нет |
| Interface Type | Parallel |
| Density | 4 Gbit |
| Maximum O | 35 mA |
| Architecture | Sectored |
| Typical O | 3.3000 V |
| Timing Type | Asynchronous |
| Рабочая температура | -40 to 85 °C |
| Maximum E | 0.003/Block s |
| Schedule B | 8542320050 |
| HTSN | 8542320051 |
| Страна происхождения | Malaysia |
| Number Of Words | 512 MWords |
| Number Of | 8 Bit |
| Minimum O | 2.7 V |
| Maximum O | 3.6 V |
| Family | MT29F4G08 |
| Cell Type | SLC NAND |
SKU: MT29F4G08ABADAWP-ITX:D