NAND Flash Memory
NAND Flash Memory
- Open NAND Flash Interface (ONFI) 1.0-compliant
- Single-level cell (SLC) technology
- Organization
- Page size x8: 2112 bytes (2048 + 64 bytes)
- Page size x16: 1056 words (1024 + 32 words)
- Block size: 64 pages (128K + 4K bytes)
- Plane size: 2 planes x 2048 blocks per plane
- Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks
- Asynchronous I/O performance
- RC/WC: 20ns (3.3V), 25ns (1.8V)
- Array performance
- Read page: 25µs
- Program page: 200µs (TYP: 1.8V, 3.3V)
- Erase block: 700µs (TYP)
- Command set: ONFI NAND Flash Protocol
- Advanced command set
- Program page cache mode
- Read page cache mode
- One-time programmable (OTP) mode
- Two-plane commands
- Interleaved die (LUN) operations
- Read unique ID
- Block lock (1.8V only)
- Internal data move
- Operation status byte provides software method for detecting
- Operation completion
- Pass/fail condition
- Write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- WP# signal: Write protect entire device
- First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management
- Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
- RESET (FFh) required as first command after power-on
- Alternate method of device initialization (Nand_Init) after power up (contact factory)
- Internal data move operations supported within the plane from which data is read
- Quality and reliability
- Data retention: 10 years
- Endurance: 100,000 PROGRAM/ERASE cycles
Характеристики
| Бренд | Micron |
|---|---|
| Maximum P | 0.6/Page ms |
| Ecc Support | Да |
| Simultane | Нет |
| Screening Level | Industrial |
| Program Current | 35 mA |
| Boot Block | Нет |
| Block Org | Symmetrical |
| Erase Sus | Нет |
| Interface Type | Parallel |
| Density | 16 Gbit |
| Maximum O | 35 mA |
| Architecture | Sectored |
| Typical O | 3.3000 V |
| Timing Type | Asynchronous |
| Рабочая температура | -40 to 85 °C |
| Maximum E | 0.003/Block s |
| Schedule B | 8542320050 |
| HTSN | 8542320051 |
| Страна происхождения | Taiwan |
| Number Of Words | 2 Gwords |
| Number Of | 8 Bit |
| Minimum O | 2.7 V |
| Maximum O | 3.6 V |
| Family | MT29F16G08 |
| Cell Type | SLC NAND |
SKU: MT29F16G08AJADAWP-IT:D