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NAND Flash Memory

NAND Flash Memory
  • Open NAND Flash Interface (ONFI) 1.0 compliant
  • Multilevel cell (MLC) technology
  • Organization
    • Page size: x8: 4,314 bytes (4,096 + 218 bytes)
    • Block size:128 pages (512K + 27K bytes)
    • Plane size: 2,048 blocks
    • Device size: 16Gb: 4,096 blocks; 32Gb: 8,192 blocks; 64Gb: 16,384 blocks; 128Gb: 32,768 blocks
  • READ performance
    • Random READ: 50µs
    • Sequential READ: 25ns
  • WRITE performance
    • PROGRAM PAGE: 900µs (TYP)
    • BLOCK ERASE: 3.5ms (TYP)
  • Endurance
    • 10,000 PROGRAM/ERASE cycles (8-bit ECC1)
  • Data retention: 10 years
  • First block (block address 00h) guaranteed to be valid when shipped from factory1
  • Industry-standard basic NAND Flash command set
  • Advanced command set
    • PROGRAM PAGE CACHE MODE
    • PAGE READ CACHE MODE
    • One-time programmable (OTP) commands
    • Two-plane commands
    • Interleaved die operations
    • READ UNIQUE ID (contact factory)
  • Operation status byte provides a software method of detecting:
    • Operation completion
    • Pass/fail condition
    • Write-protect status
  • Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM or ERASE cycle completion
  • WP# signal: entire device hardware write protect
  • RESET required after power-up
  • INTERNAL DATA MOVE operations supported within the plane from which data is read

Характеристики

Бренд Micron
Maximum P 0.56/Page ms
Ecc Support Да
Simultane Нет
Boot Block Нет
Block Org Symmetrical
Erase Sus Нет
Interface Type Parallel
Density 128 Gbit
Typical O 3.3000 V
Timing Type Asynchronous
Рабочая температура -40 to 85 °C
Maximum E 0.007/Block s
Schedule B 8542320050
HTSN 8542320051
Страна происхождения Singapore
Number Of Words 16 Gwords
Number Of 8 Bit
Cell Type SLC NAND
SKU: MT29F128G08AJAAAWP-ITZ:A