NAND Flash Memory
NAND Flash Memory
- Open NAND Flash Interface (ONFI) 1.0 compliant
- Multilevel cell (MLC) technology
- Organization
- Page size: x8: 4,314 bytes (4,096 + 218 bytes)
- Block size:128 pages (512K + 27K bytes)
- Plane size: 2,048 blocks
- Device size: 16Gb: 4,096 blocks; 32Gb: 8,192 blocks; 64Gb: 16,384 blocks; 128Gb: 32,768 blocks
- READ performance
- Random READ: 50µs
- Sequential READ: 25ns
- WRITE performance
- PROGRAM PAGE: 900µs (TYP)
- BLOCK ERASE: 3.5ms (TYP)
- Endurance
- 10,000 PROGRAM/ERASE cycles (8-bit ECC1)
- Data retention: 10 years
- First block (block address 00h) guaranteed to be valid when shipped from factory1
- Industry-standard basic NAND Flash command set
- Advanced command set
- PROGRAM PAGE CACHE MODE
- PAGE READ CACHE MODE
- One-time programmable (OTP) commands
- Two-plane commands
- Interleaved die operations
- READ UNIQUE ID (contact factory)
- Operation status byte provides a software method of detecting:
- Operation completion
- Pass/fail condition
- Write-protect status
- Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM or ERASE cycle completion
- WP# signal: entire device hardware write protect
- RESET required after power-up
- INTERNAL DATA MOVE operations supported within the plane from which data is read
Характеристики
| Бренд | Micron |
|---|---|
| Maximum P | 0.56/Page ms |
| Ecc Support | Да |
| Simultane | Нет |
| Boot Block | Нет |
| Block Org | Symmetrical |
| Erase Sus | Нет |
| Interface Type | Parallel |
| Density | 128 Gbit |
| Typical O | 3.3000 V |
| Timing Type | Asynchronous |
| Рабочая температура | -40 to 85 °C |
| Maximum E | 0.007/Block s |
| Schedule B | 8542320050 |
| HTSN | 8542320051 |
| Страна происхождения | Singapore |
| Number Of Words | 16 Gwords |
| Number Of | 8 Bit |
| Cell Type | SLC NAND |
SKU: MT29F128G08AJAAAWP-ITZ:A