NAND Flash Memory
NAND Flash Memory
Характеристики
| Бренд | Samsung |
|---|---|
| Maximum P | 0.75/Page ms |
| Ecc Support | Да |
| Simultane | Нет |
| Screening Level | Commercial |
| Program Current | 30 mA |
| Boot Block | Нет |
| Block Org | Symmetrical |
| Erase Sus | Нет |
| Interface Type | Parallel |
| Density | 4 Gbit |
| Maximum O | 30 mA |
| Architecture | Sectored |
| Typical O | 3.3000 V |
| Timing Type | Asynchronous |
| Рабочая температура | 0 to 70 °C |
| Maximum E | 0.01/Block s |
| Schedule B | 8542320050 |
| HTSN | 8542320051 |
| Number Of Words | 512 MWords |
| Number Of | 8 Bit |
| Minimum O | 2.7 V |
| Maximum O | 3.6 V |
| Упаковка | Tray |
| Family | K9F4G08 |
| Cell Type | SLC NAND |
SKU: K9F4G08U0D-SCB0000