N-channel MDmesh > 700 V
This Power MOSFET is designed using the consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
- Intrinsic capacitances and Qg minimized
- High speed switching
- 100% avalanche tested
- RDS(on) max: 13 O
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8541290040 |
| HTSN | 8541290095 |
| Страна происхождения | Китай |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 2.3 A |
| Maximum D | 1700 V |
| Maximum G | ±30 V |
| Rds On | 12@10V MOhm |
| Family | STW3N170 |
| Упаковка | Tube |
SKU: STW3N170