N-CHANNEL 600V
N-CHANNEL 600V
- Fast body diode MOSFET using E series technology
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM): Ron x Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Drain-Source Voltage VDS: 600 V
Характеристики
| Бренд | Vishay |
|---|---|
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | Китай |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 28 A |
| Maximum D | 600 V |
| Maximum G | ±30 V |
| Typical T | 24 ns |
| Typical T | 82 ns |
| Typical F | 39 ns |
| Typical R | 40 ns |
| Family | SIHG28N60EF |
SKU: SIHG28N60EF-GE3