MV POWER MOS
The new OptiMOS™ 300V MOSFETs, incorporating fast diode technology, are especially optimized for body diode hard commutation. The devices not only demonstrate impressive on-state resistance (R DS(on)) and figure of merit (FOM), but also provide high system reliability through the lowest reverse recovery charge (Q rr) available on the market. With the new 300V OptiMOS™ series, Infineon brings a new level of performance in hard switching applications such as telecom, uninterruptible power supplies (UPS), industrial power supplies, DC-AC inverters and motor control.
Характеристики
| Бренд | Infineon |
|---|---|
| Рабочая температура | -55 to 175 °C |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 44 A |
| Maximum D | 300 V |
| Maximum G | 20 V |
| Typical T | 16 ns |
| Typical T | 43 ns |
| Rds On | 41@10V MOhm |
| Typical F | 9 ns |
| Typical R | 9 ns |
| Family | IPP410N30N |
| Упаковка | Tube |
SKU: IPP410N30NAKSA1