Multi Chip Discrete Device 8-Pin PS T/R
Multi Chip Discrete Device 8-Pin PS T/R
- High DC current gain: hFE = 200 to 500 (Ic = -0.5 A)(PNP Transistor)
- Low collector-emitter saturation: Vce (sat) = -0.19 V (max)(PNP Transistor)
- High-speed switching: tf = 40 ns (typ.) (PNP Transistor)
Характеристики
| Бренд | Toshiba |
|---|---|
| Описание продукта | 2.9 x 2.4 x 0.8 mm |
| Category | Multi Chip Discrete Device |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | Malaysia |
| Supplier | PS |
| Рабочая температура | -55 to 150 °C |
SKU: TPCP8F01(TE85LFM