MOS Power Transistors LV (=< 40V)
MOS Power Transistors LV (=< 40V)
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Описание продукта | 6.40 x 5.20 x 0.90 mm |
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Страна происхождения | Китай |
| Channel Type | N |
| Supplier | PowerFLAT |
| Maximum C | 120 A |
| Maximum G | ±20 V |
| Rds On | 0.0025@10V Ohm |
| Screening Level | Automotive / AEC-Q101 qualified |
| Maximum P | 111 W |
| Family | STL140N4F7AG |
| Упаковка | T/R |
| Type Prod | N-channel, designed using STripFET F7 technology |
| Maximum F | 5.7 ns |
| Output Re | 0.0021 Ohm |
| Junction | 1.35 °C/W |
| Maximum T | 14 ns |
| Maximum T | 19 ns |
| Minimum B | 40 V |
| Special F | Very low On-Resistance; reduced internal capacitance and gate charge; High avalanche ruggedness |
| Maximum R | 6.6 ns |
| Quantity | 3000 |
SKU: STL140N4F7AG