MOS Power Transistors LV (< 200V)
MOS Power Transistors LV (< 200V)
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Typical R | 2.7@Q1|1.6@Q2 ns |
| Typical T | 5.2 ns |
| Maximum C | 1 A |
| Maximum G | ±20@Q1|±25@Q2 V |
| Rds On | 30@10V|1200@10V mOhm |
| Channel Type | Dual N|P |
| Msl Level | 1 |
| Typical T | 7.4 ns |
| Maximum D | 150 V |
| Рабочая температура | -55 to 150 °C |
| Channel Mode | Enhancement |
| Typical F | 4@Q1|6.3@Q2 ns |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | United States |
| Typical T | 18 ns |
| Typical T | 12 ns |
| Maximum C | 6.2 A |
| Упаковка | Tape and Reel |
| Family | FDMS8095AC |
SKU: FDMS8095AC