MOS Power Transistors LV (< 200V)
MOS Power Transistors LV (< 200V)
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | United States |
| Channel Type | P |
| Channel Mode | Enhancement |
| Maximum C | 0.4 A |
| Maximum D | 200 V |
| Maximum G | ±20 V |
| Typical T | 10 ns |
| Typical T | 43 ns |
| Rds On | 5@10V Ohm |
| Typical F | 42 ns |
| Typical R | 4 ns |
| Family | CPH3331 |
SKU: CPH3331-TL-E