MOS Power Transistors HV (>= 200V)
These Power MOSFETs have been developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
- VDSS: 300 V
Характеристики
| Бренд | STMicroelectronics |
|---|---|
| Рабочая температура | -55 to 175 °C |
| Msl Level | 1 |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 42 A |
| Maximum D | 300 V |
| Maximum G | ±20 V |
| Typical T | 25 ns |
| Typical T | 80 ns |
| Rds On | 0.075@10V Ohm |
| Typical F | 46 ns |
| Typical R | 38 ns |
| Family | STB46NF30 |
| Упаковка | T/R |
SKU: STB46NF30