MOS Power Transistors HV (>= 200V)

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
• RDS(on) max: 4.0 mO