MOS Power Transistors HV (>= 200V)
MOS Power Transistors HV (>= 200V)
- Fast body diode MOSFET using E series technology
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM): Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Drain-Source Voltage VDS: 600 V
Характеристики
| Бренд | Vishay |
|---|---|
| Рабочая температура | -55 to 150 °C |
| Schedule B | 8541290080 |
| HTSN | 8541290095 |
| Страна происхождения | Китай |
| Channel Type | N |
| Channel Mode | Enhancement |
| Maximum C | 33 A |
| Maximum D | 600 V |
| Maximum G | ±30 V |
| Typical T | 28 ns |
| Typical T | 161 ns |
| Rds On | 0.098@10V Ohm |
| Typical F | 48 ns |
| Typical R | 43 ns |
| Family | SIHP33N60EF |
SKU: SIHP33N60EF-GE3