MOS Power Transistors HV (>= 200V)
The input signals are low voltage TTL and 3.3V CMOS-compatible with a very broad voltage handling capability of up to +20V and down to -10VDC. The unique ability to handle -10VDC at the input pins protects the device against ground bouncing. Each of the two outputs is able to sink and source a 5A current utilizing a true rail-to-rail output stage, which ensures very low impedances of 0.7O up to the positive and 0.55O down to the negative rail respectively.
- Fast, precise, strong and compatible
- Highly efficient SMPS enabled by 5 ns fast slew rates and 19 ns propagation delay precision for fast MOSFET and GaN switching
- 1 ns channel-to-channel propagation delay accuracy enables safe use of two channels in parallel
- Two independent 5 A channels enable numerous deployment options
- Industry standard packages and pinout ease system-design upgrades
- The new Reference in Ruggedness
- 4.2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET protection under abnormal conditions
- -10 V control and enable input robustness delivers crucial safety margin when driving pulse-transformers or driving MOSFETs in through hole packaging
- 5 A reverse current robustness eliminates the need for output protection circuitry.
Характеристики
| Бренд | Infineon |
|---|---|
| Описание продукта | 5(Max) x 4(Max) x 1.65(Max) |
| Peak Outp | 5 A |
| Maximum O | 20 V |
| Supplier | DSO |
| Рабочая температура | -40 to 150 °C |
| Lead Finish | Gold Over Nickel Palladium |
| Schedule B | 8542390000 |
| HTSN | 8542390001 |
| Страна происхождения | United States |
| Minimum O | 4.5 V |
| Screening Level | Extended Industrial |
| Input Log | 3.3V|CMOS|LVTTL |
| Output Re | 1.2 Ohm |
SKU: 2EDN7524FXTMA1