M29F800FB5AN6E2
M29F800FB5AN6E2
Характеристики
| Бренд | Micron |
|---|---|
| Maximum P | 30000/Chip ms |
| Ecc Support | Нет |
| Simultane | Нет |
| Lead Finish | Matte Tin |
| Screening Level | Automotive |
| Program Current | 30 mA |
| Boot Block | Да |
| Block Org | Asymmetrical |
| Erase Sus | Да |
| Interface Type | Parallel |
| Programmi | 4.5, 5.5 V |
| Density | 8 Mb |
| Maximum R | 55 ns |
| Maximum O | 20 mA |
| Architecture | Sectored |
| Typical O | 5.0000 V |
| Описание продукта | 12 x 18.4 x 1 mm |
| Timing Type | Asynchronous |
| Рабочая температура | -40 to 85 °C |
| Address B | 20|19 Bit |
| Maximum E | 60/Chip s |
| Schedule B | 8542320050 |
| HTSN | 8542320051 |
| Страна происхождения | Malaysia |
| Number Of Words | 1, 512 M/K |
| Number Of | 8, 16 Bit |
| Cell Type | NOR |
| Oe Access Time | 20 ns |
| Location | Bottom |
SKU: M29F800FB5AN6E2