Low Power
Low Power
Характеристики
| Бренд | ON Semiconductor |
|---|---|
| Minimum D | 100@150mA@10V |
| Maximum D | 1 A |
| Maximum P | 800 mW |
| Описание продукта | 9.4 x 9.4 x 6.6 mm |
| Maximum C | 140 V |
| Maximum E | 7 V |
| Maximum C | 0.5@50mA@500mA V |
| Maximum C | 80 V |
| Рабочая температура | -65 to 200 °C |
| Lead Finish | Tin/Lead |
| Type Prod | NPN |
| Supplier | TO-39 |
| Schedule B | 8541210080 |
| HTSN | 8541210095 |
| Maximum B | 1.1@15mA@150mA V |
| Screening Level | Military |
SKU: JAN2N3019