IGBTs

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
• VCE(sat) = 1.85 V (typ.) @ IC = 60 A
• Tight parameter distribution
• Safe paralleling
• Low thermal resistance
• Very fast soft recovery antiparallel diode