IGBT & POWER BIPOLAR

The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.The STBV42G and STBV42G-AP are supplied using halogen-free molding compound.

High voltage capability

Low spread of dynamic parameters

Very high switching speed