Flash Card 100G-Byte 5V Solid State Drive 15-Pin Tray

Micron’s P400e solid state drive (SSD) uses a single-chip controller with a SATA interface on the system side and n-channels of Micron NAND Flash internally. Packaged in an HDD replacement enclosure, the SSD integrates easily in existing storage infrastructures. The P400e SSD device is targeted at applications that require enterprise performance in high random READ operations; high performance in terms of IOPS or latency; high endurance; high data retention; or applications that are deployed in cost-sensitive environments that do not have significant WRITE operation constraints.

• Micron® 25nm MLC NAND Flash
• RoHS-compliant package
• SATA 6 Gb/s interface
• ATA modes supported
  • PIO mode 3, 4
  • Multiword DMA mode 0, 1, 2
  • Ultra DMA mode 0, 1, 2, 3, 4, 5
• Industry-standard, 512-byte sector size support
• Hot-plug capable
• Native command queuing support with 32-command
• slot support
• ATA-8 ACS2 command set compliant
• ATA security feature command set and password login support
• Security erase (data page) command set: fast and secure erase
• Self-monitoring, analysis, and reporting technology (SMART) command set
• 50GB performance (steady state)1, 2
  • Sequential 64KB/128KB read: 440 MB/s
  • Sequential 64KB/128KB write: 100 MB/s
  • Random 4KB read: 59,000 IOPS
  • Random 4KB write: 7300 IOPS
  • Random 8KB read: 26,000 IOPS
  • Random 8KB write: 3900 IOPS
  • READ latency: 0.54ms (TYP)
  • WRITE latency: 4.5ms (TYP)
• 100GB performance (steady state)1, 2
  • Sequential 64KB/128KB read: 430 MB/s
  • Sequential 64KB/128KB write: 160 MB/s
  • Random 4KB read: 59,000 IOPS
  • Random 4KB write: 8900 IOPS
  • Random 8KB read: 31,000 IOPS
  • Random 8KB write: 5000 IOPS
  • READ latency: 0.5ms (TYP)
  • WRITE latency: 4ms (TYP)
• 200GB performance (steady state)1, 2
  • Sequential 64KB/128KB read: 430 MB/s
  • Sequential 64KB/128KB write: 240 MB/s
  • Random 4KB read: 44,000 IOPS
  • Random 4KB write: 9500 IOPS
  • Random 8KB read: 31,000 IOPS
  • Random 8KB write: 6500 IOPS
  • READ latency: 0.7ms (TYP)
  • WRITE latency: 3.4ms (TYP)
• 400GB performance (steady state)1, 2
  • Sequential 64KB/128KB read: 430 MB/s
  • Sequential 64KB/128KB write: 240 MB/s
  • Random 4KB read: 47,000 IOPS
  • Random 4KB write: 11,300 IOPS
  • Random 8KB write: 34,000 IOPS
  • Random 8KB write: 7400 IOPS
  • READ latency: 0.65ms (TYP)
  • WRITE latency: 2.8ms (TYP)
• Reliability
  • Mean time to failure (MTTF): 1.2 million device
• hours3
  • Static and dynamic wear leveling
  • Field-upgradeable firmware
  • Uncorrectable bit error rate (UBER): <1 sector per 1015 bits read
  • Low power consumption
• Endurance: total bytes written (TBW)
  • 50GB: 87.5TB
  • 100-400GB: 175TB
• Capacity4 (unformatted): 50GB, 100GB, 200GB, 400GB
• Mechanical: 7.0mm height
  • SATA connector: 5V ±5%
  • 2.5-inch drive: 100.5mm x 69.85mm x 7.0mm
• Field-updateable firmware
• Operating temperature
  • Commercial (0°C to +70°C)5